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RF COMMUNICATIONS PRODUCTS
SA605 High performance low power mixer FM IF system
Product specification Replaces data of November 3, 1992 RF Communications Handbook 1997 Nov 07
Philips Semiconductors
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
DESCRIPTION
The SA605 is a high performance monolithic low-power FM IF system incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector, muting, logarithmic received signal strength indicator (RSSI), and voltage regulator. The SA605 combines the functions of Signetics' SA602 and SA604A, but features a higher mixer input intercept point, higher IF bandwidth (25MHz) and temperature compensated RSSI and limiters permitting higher performance application. The SA605 is available in 20-lead dual-in-line plastic, 20-lead SOL (surface-mounted miniature package) and 20-lead SSOP (shrink small outline package). The SA605 and SA615 are functionally the same device types. The difference between the two devices lies in the guaranteed specifications. The SA615 has a higher ICC, lower input third order intercept point, lower conversion mixer gain, lower limiter gain, lower AM rejection, lower SINAD, higher THD, and higher RSSI error than the SA605. Both the SA605 and SA615 devices will meet the EIA specifications for AMPS and TACS cellular radio applications. For additional technical information please refer to application notes AN1994, 1995 and 1996, which include example application diagrams, a complete overview of the product, and artwork for reference.
PIN CONFIGURATION
N, D and DK Packages
RFIN 1 20 MIXER OUT 19 IF AMP DECOUPLING 18 IF AMP IN 17 IF AMP DECOUPLING
RF BYPASS 2 XTAL OSC XTAL OSC MUTEIN VCC RSSIOUT 3 4 5 6 7
16 IF AMP OUT 15 GND 14 LIMITER IN 13 12 11 LIMITER DECOUPLING LIMITER DECOUPLING LIMITER OUT
MUTED AUDIO OUT 8 UNMUTED AUDIO OUT 9 QUADRATURE IN 10
SR00335
Figure 1. Pin Configuration
FEATURES
APPLICATIONS
* Cellular radio FM IF * High performance communications receivers * Single conversion VHF/UHF receivers * SCA receivers * RF level meter * Spectrum analyzer * Instrumentation * FSK and ASK data receivers * Log amps * Wideband low current amplification
* Low power consumption: 5.7mA typical at 6V * Mixer input to >500MHz * Mixer conversion power gain of 13dB at 45MHz * Mixer noise figure of 4.6dB at 45MHz * XTAL oscillator effective to 150MHz (L.C. oscillator to 1GHz local
oscillator can be injected)
* 102dB of IF Amp/Limiter gain * 25MHz limiter small signal bandwidth * Temperature compensated logarithmic Received Signal Strength
Indicator (RSSI) with a dynamic range in excess of 90dB
* Two audio outputs - muted and unmuted * Low external component count; suitable for crystal/ceramic/LC
filters
* Excellent sensitivity:
0.22V into 50 matching network for 12dB SINAD (Signal to Noise and Distortion ratio) for 1kHz tone with RF at 45MHz and IF at 455kHz
* SA605 meets cellular radio specifications * ESD hardened
ORDERING INFORMATION
DESCRIPTION 20-Pin Plastic Dual In-Line Package (DIP) 20-Pin Plastic Small Outline Large (SOL) package 20-Pin Plastic Shrink Small Outline Package (SSOP) TEMPERATURE RANGE -40 to +85C -40 to +85C -40 to +85C ORDER CODE SA605N SA605D SA605DK DWG # SOT146-1 SOT163-1 SOT266-1
1997 Nov 07
2
853-1401 18663
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
BLOCK DIAGRAM
20 19 18 17 16 15 14 13 12 11
IF AMP
LIMITER
RSSI OSCILLATOR
E
B
1
2
3
4
5
6
7
8
9
10
SR00336
Figure 2. Block Diagram
ABSOLUTE MAXIMUM RATINGS
SYMBOL VCC TSTG TA JA Single supply voltage Storage temperature range Operating ambient temperature range SA605 Thermal impedance D package N package SSOP package PARAMETER RATING 9 -65 to +150 -40 to +85 90 75 117 UNITS V
C C
C/W
DC ELECTRICAL CHARACTERISTICS
VCC = +6V, TA = 25C; unless otherwise stated. LIMITS SYMBOL VCC ICC PARAMETER Power supply voltage range DC current drain Mute switch input threshold (ON) (OFF) TEST CONDITIONS MIN 4.5 4.55 1.7 1.0 5.7 SA605 TYP MAX 8.0 6.55 V mA V V UNITS
1997 Nov 07
3
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
AC ELECTRICAL CHARACTERISTICS
TA = 25C; VCC = +6V, unless otherwise stated. RF frequency = 45MHz + 14.5dBV RF input step-up; IF frequency = 455kHz; R17 = 5.1k; RF level = -45dBm; FM modulation = 1kHz with 8kHz peak deviation. Audio output with C-message weighted filter and de-emphasis capacitor. Test circuit Figure 3. The parameters listed below are tested using automatic test equipment to assure consistent electrical characterristics. The limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed parameters. LIMITS SYMBOL PARAMETER TEST CONDITIONS MIN Mixer/Osc section (ext LO = 300mV) fIN fOSC Input signal frequency Crystal oscillator frequency Noise figure at 45MHz Third-order input intercept point Conversion power gain RF input resistance RF input capacitance Mixer output resistance IF section IF amp gain Limiter gain Input limiting -3dB, R17 = 5.1k AM rejection Audio level, R10 = 100k Unmuted audio level, R11 = 100k SINAD sensitivity THD S/N Total harmonic distortion Signal-to-noise ratio IF RSSI output, R9 = 100k1 No modulation for noise IF level = -118dBm IF level = -68dBm IF level = -18dBm RSSI range RSSI accuracy IF input impedance IF output impedance Limiter input impedance Unmuted audio output resistance Muted audio output resistance RF/IF section (int LO) Unmuted audio level System RSSI output 4.5V = VCC, RF level = -27dBm 4.5V = VCC, RF level = -27dBm 450 4.3 mVRMS V R9 = 100k Pin 16 R9 = 100k Pin 16 1.40 0.85 1.40 0 1.9 4.0 50 source 50 source Test at Pin 18 80% AM 1kHz 15nF de-emphasis 150pF de-emphasis RF level -118dB -34 29 80 39.7 62.5 -113 34 150 480 16 -42 73 160 2.5 4.8 90 +1.5 1.6 1.0 1.6 58 58 650 3.1 5.6 43 260 dB dB dBm dB mVRMS mV dB dB dB mV V V dB dB k k k k k (Pin 20) 1.25 f1 = 45.0; f2 = 45.06MHz Matched 14.5dBV step-up 50 source Single-ended input 3.0 10 500 150 5.0 -10 13 -1.7 4.7 3.5 1.5 4.0 15 MHz MHz dB dBm dB dB k pF k SA605 TYP MAX UNITS
NOTE: 1. The generator source impedance is 50, but the SA605 input impedance at Pin 18 is 1500. As a result, IF level refers to the actual signal that enters the SA605 input (Pin 8) which is about 21dB less than the "available power" at the generator.
1997 Nov 07
4
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
CIRCUIT DESCRIPTION
The SA605 is an IF signal processing system suitable for second IF or single conversion systems with input frequency as high as 1GHz. The bandwidth of the IF amplifier is about 40MHz, with 39.7dB(v) of gain from a 50 source. The bandwidth of the limiter is about 28MHz with about 62.5dB(v) of gain from a 50 source. However, the gain/bandwidth distribution is optimized for 455kHz, 1.5k source applications. The overall system is well-suited to battery operation as well as high performance and high quality products of all types. The input stage is a Gilbert cell mixer with oscillator. Typical mixer characteristics include a noise figure of 5dB, conversion gain of 13dB, and input third-order intercept of -10dBm. The oscillator will operate in excess of 1GHz in L/C tank configurations. Hartley or Colpitts circuits can be used up to 100MHz for xtal configurations. Butler oscillators are recommended for xtal configurations up to 150MHz. The output of the mixer is internally loaded with a 1.5k resistor permitting direct connection to a 455kHz ceramic filter. The input resistance of the limiting IF amplifiers is also 1.5k. With most 455kHz ceramic filters and many crystal filters, no impedance matching network is necessary. To achieve optimum linearity of the log signal strength indicator, there must be a 12dB(v) insertion loss between the first and second IF stages. If the IF filter or interstage
network does not cause 12dB(v) insertion loss, a fixed or variable resistor can be added between the first IF output (Pin 16) and the interstage network. The signal from the second limiting amplifier goes to a Gilbert cell quadrature detector. One port of the Gilbert cell is internally driven by the IF. The other output of the IF is AC-coupled to a tuned quadrature network. This signal, which now has a 90 phase relationship to the internal signal, drives the other port of the multiplier cell. Overall, the IF section has a gain of 90dB. For operation at intermediate frequencies greater than 455kHz, special care must be given to layout, termination, and interstage loss to avoid instability. The demodulated output of the quadrature detector is available at two pins, one continuous and one with a mute switch. Signal attenuation with the mute activated is greater than 60dB. The mute input is very high impedance and is compatible with CMOS or TTL levels. A log signal strength completes the circuitry. The output range is greater than 90dB and is temperature compensated. This log signal strength indicator exceeds the criteria for AMPs or TACs cellular telephone. NOTE: dB(v) = 20log VOUT/VIN
1997 Nov 07
5
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
-25dB,
-10dB,
-29dB,
-10.6dB,
-36dB,
1500/50 PAD 50/50 PAD
929/50 PAD
50/50 PAD
156k/50 PAD
50.5 3880 2430 C24 SW9
96.5 71.5
51.5
96.5 32.8 71.5 C19 SW6 C18 C17
51.7
32.6
1.3k C16 SW5 C15
C20 C22 FLT1 C23 SW8 C21 SW7
R17 5.1k
FLT2
20
19
18
17
16
15
14
13
12
11
IF AMP 700 LIMITER MIXER OSCILLATOR RSSI EMITTER BASE MUTE SWITCH QUAD DETECTOR
1
2
3
4
5
6
7
8
9
10
C1
SW1
SW3 C8
SW4
C9
R9
R10
R11
C2
L1 C7 C10 SW2 R4 51.1 C5 L2 C6 C4 EXT. LOC OSC 44.545 45.06 MHZ MINI-CIRCUIT ZSC2-1B X1 R7 30.5 R6 178 R8 39.2 MUTE VCC "C" WEIGHTED AUDIO MEASUREMENT CIRCUIT C26 C11 C12 C13 IFT1
R1 C3 R3 R2
C14
45MHZ
RSSI AUDIO UNMUTED AUDIO OUTPUT
C1 C2 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 C17 C18
Automatic Test Circuit Component List C21 100nF +10% Monolithic Ceramic 47pF NPO Ceramic C23 100nF +10% Monolithic Ceramic 180pF NPO Ceramic C25 100nF +10% Monolithic Ceramic 100nF +10% Monolithic Ceramic C26 390pF +10% Monolithic Ceramic 22pF NPO Ceramic Flt 1 Ceramic Filter Murata SFG455A3 or equiv 1nF Ceramic Flt 2 Ceramic Filter Murata SFG455A3 or equiv 10.0pF NPO Ceramic IFT 1 455kHz 270H TOKO #303LN-1129 100nF +10% Monolithic Ceramic L1 300nH TOKO #5CB-1055Z 6.8F Tantalum (minimum) * L2 0.8H TOKO 292CNS-T1038Z 100nF +10% Monolithic Ceramic X1 44.545MHz Crystal ICM4712701 15nF +10% Ceramic R9 100k +1% 1/4W Metal Film 150pF +2% N1500 Ceramic R17 5.1k +5% 1/4W Carbon Composition 100nF +10% Monolithic Ceramic R10 100k +1% 1/4W Metal Film (optional) 10pF NPO Ceramic R11 100k +1% 1/4W Metal Film (optional) 100nF +10% Monolithic Ceramic 100nF +10% Monolithic Ceramic
SR00337
* NOTE: This value can be reduced when a battery is the power source.
Figure 3. SA605 45MHz Test Circuit (Relays as shown) 1997 Nov 07 6
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
R17 5.1k FLT1 C23 C21 FLT2 C18 C17
C15
20
19
18
17
16
15
14
13
12
11
IF AMP 700 LIMITER MIXER OSCILLATOR RSSI MUTE SWITCH QUAD DETECTOR
1
2
3
4
5
6
7
8
9
10
C1 C8 C2 L1 R5 C5 L2 45MHz INPUT C6 X1 C7
C9
R9
R10
R11
C10
C11
C12
C13 IFT1 C26
C25 C14
MUTE
VCC
RSSI AUDIO UNMUTED AUDIO OUTPUT
Application Component List C1 C2 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 C17 C18 47pF NPO Ceramic 180pF NPO Ceramic 100nF +10% Monolithic Ceramic 22pF NPO Ceramic 1nF Ceramic 10.0pF NPO Ceramic 100nF +10% Monolithic Ceramic 6.8F Tantalum (minimum) 100nF +10% Monolithic Ceramic 15nF +10% Ceramic 150pF +2% N1500 Ceramic 100nF +10% Monolithic Ceramic 10pF NPO Ceramic 100nF +10% Monolithic Ceramic 100nF +10% Monolithic Ceramic C21 C23 C25 C26 Flt 1 Flt 2 IFT 1 L1 L2 X1 R9 R17 R10 R11 100nF +10% Monolithic Ceramic 100nF +10% Monolithic Ceramic 100nF +10% Monolithic Ceramic 390pF +10% Monolithic Ceramic Ceramic Filter Murata SFG455A3 or equiv Ceramic Filter Murata SFG455A3 or equiv 455kHz 270H TOKO #303LN-1129 300nH TOKO #5CB-1055Z 0.8H TOKO 292CNS-T1038Z 44.545MHz Crystal ICM4712701 100k +1% 1/4W Metal Film 5.1k +5% 1/4W Carbon Composition 100k +1% 1/4W Metal Film (optional) 100k +1% 1/4W Metal Film (optional)
* NOTE: This value can be reduced when a battery is the power source.
SR00338
Figure 4. SA605 45MHz Application Circuit
1997 Nov 07
7
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
RF GENERATOR 45MHz
NE605 DEMO BOARD
VCC (+6)
RSSI
AUDIO
DATA
DC VOLTMETER
C-MESSAGE
SCOPE
HP339A DISTORTION ANALYZER
SR00339
Figure 5. SA605 Application Circuit Test Set Up NOTES: 1. C-message: The C-message filter has a peak gain of 100 for accurate measurements. Without the gain, the measurements may be affected by the noise of the scope and HP339 analyzer. 2. Ceramic filters: The ceramic filters can be 30kHz SFG455A3s made by Murata which have 30kHz IF bandwidth (they come in blue), or 16kHz CFU455Ds, also made by Murata (they come in black). All of our specifications and testing are done with the more wideband filter. 3. RF generator: Set your RF generator at 45.000MHz, use a 1kHz modulation frequency and a 6kHz deviation if you use 16kHz filters, or 8kHz if you use 30kHz filters. 4. Sensitivity: The measured typical sensitivity for 12dB SINAD should be 0.22V or -120dBm at the RF input. 5. Layout: The layout is very critical in the performance of the receiver. We highly recommend our demo board layout. 6. RSSI: The smallest RSSI voltage (i.e., when no RF input is present and the input is terminated) is a measure of the quality of the layout and design. If the lowest RSSI voltage is 250mV or higher, it means the receiver is in regenerative mode. In that case, the receiver sensitivity will be worse than expected. 7. Supply bypass and shielding: All of the inductors, the quad tank, and their shield must be grounded. A 10-15F or higher value tantalum capacitor on the supply line is essential. A low frequency ESR screening test on this capacitor will ensure consistent good sensitivity in production. A 0.1F bypass capacitor on the supply pin, and grounded near the 44.545MHz oscillator improves sensitivity by 2-3dB. 8. R5 can be used to bias the oscillator transistor at a higher current for operation above 45MHz. Recommended value is 22k, but should not be below 10k.
1997 Nov 07
8
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
20 RF = 45MHz IF = 455kHz VCC = 6V AUDIO REF = 174mVRMS 0 5 RSSI (Volts)
RELATIVE TO AUDIO OUTPUT (dB)
-20
4
THD NOISE -40 AM (80%) 3
-60
2
-80
RSSI (Volts)
NOISE
1
-100 -130
0 -110 -90 -70 -50 -30 -10 10 RF INPUT LEVEL (dBm)
SR00340
Figure 6. SA605 Application Board at 25C
1997 Nov 07
9
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
DIP20: plastic dual in-line package; 20 leads (300 mil)
SOT146-1
1997 Nov 07
10
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
SO20: plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
1997 Nov 07
11
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
1997 Nov 07
12
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
DEFINITIONS
Data Sheet Identification
Objective Specification
Product Status
Formative or in Design
Definition
This data sheet contains the design target or goal specifications for product development. Specifications may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes at any time without notice, in order to improve design and supply the best possible product.
Preliminary Specification
Preproduction Product
Product Specification
Full Production
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. LIFE SUPPORT APPLICATIONS Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices, or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088-3409 Telephone 800-234-7381 (c) Copyright Philips Electronics North America Corporation 1997 All rights reserved. Printed in U.S.A.
Philips Semiconductors
1997 Nov 07 13

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